Drag gan

DragGAN (SIGGRAPH'2023)Drag Your GAN: Interactive Point-based Manipulation on the Generative Image ManifoldTask: DragGANAbstractSynthesizing visual content that meets users’ needs often requires flexibleand precise controllability of the pose, shape, expression, and layout of thegenerated objects. Existing approaches gain controllability of generativeadversarial networks (GANs) via manually annotated training data or aprior 3D model, which often lack flexibility, precision, and generality. Inthis work, we study a powerful yet much less explored way of controllingGANs, that is, to "drag" any points of the image to precisely reach targetpoints in a user-interactive manner, as shown in Fig.1. To achieve this, wepropose DragGAN, which consists of two main components: 1) a feature-based motion supervision that drives the handle point to move towardsthe target position, and 2) a new point tracking approach that leveragesthe discriminative generator features to keep localizing the position of thehandle points. Through DragGAN, anyone can deform an image with precisecontrol over where pixels go, thus manipulating the pose, shape, expression,and layout of diverse categories such as animals, cars, humans, landscapes,etc. As these manipulations are performed on the learned generative imagemanifold of a GAN, they tend to produce realistic outputs even for challenging scenarios such as hallucinating occluded content and deformingshapes that consistently follow the object’s rigidity. Both qualitative andquantitative comparisons demonstrate the advantage of DragGAN over priorapproaches in the tasks of image manipulation and point tracking. We alsoshowcase the manipulation of real images through GAN inversion.Results and Models Gradio Demo of DragGAN StyleGAN2-elephants-512 by MMagic ModelDatasetCommentFID50kPrecision50kRecall50kDownloadstylegan2_lion_512x512Internet Lionsself-distilled StyleGAN0.00.00.0modelstylegan2_elphants_512x512Internet Elephantsself-distilled StyleGAN0.00.00.0modelstylegan2_cats_512x512Cat AFHQself-distilled StyleGAN0.00.00.0modelstylegan2_face_512x512FFHQself-distilled StyleGAN0.00.00.0modelstylegan2_horse_256x256LSUN-Horseself-distilled

Depletion region in the GaN epitaxial layer, effectively depleting the 2DEG. As Vgs increases, the 2DEG beneath the gate gradually recovers, enabling a higher IDS current to flow through the channel. The threshold voltage (Vth) is defined as the Vgs value at which IDS reaches a specified level.Figure 3: Structure of an InnoGaN™ E-Mode GaN HEMT (Source: Innoscience)ROHM SemiconductorROHM offers a range of GaN-based products under the EcoGaN™ brand, designed to optimize performance for lower power consumption, more compact peripheral components, and simplified circuit designs with fewer parts. The EcoGaN™ lineup includes both GaN HEMT devices and GaN-integrated ICs with built-in controllers.A key challenge in the widespread adoption of GaN technology is ensuring the reliability of GaN HEMTs, with the growth of the GaN epitaxial layer playing a crucial role in GaN-on-Si manufacturing. ROHM has been actively developing GaN technology since 2006, leveraging its proprietary expertise in GaN epitaxial layer growth—originally refined for high-reliability LED production—to deliver robust and dependable products.In April 2023, ROHM commenced production of 650V GaN HEMTs, covering a key voltage range in the GaN market. Beyond enhancing GaN HEMT performance, ROHM is also advancing solutions for GaN drive and control, including gate driver and controller ICs. These innovations enable higher switching speeds while minimizing losses, offering user-friendly GaN solutions for more efficient power applications.Key parameters for evaluating GaN power devicesWhen evaluating or selecting a GaN power device, several critical parameters should be considered:VDS,max (drain-source voltage): It is the maximum voltage the device is guaranteed to block

Deliver higher efficiency, faster switching speeds, and reduced power losses, GaN-based power semiconductors offer significant advantages over traditional silicon-based devices. Their superior electrical properties make these devices highly attractive for applications in consumer electronics, data centers, automotive, renewable energy, RF, and even space systems.Several leading semiconductor manufacturers have developed GaN-based power solutions, each with distinct innovations and approaches to enhance performance and adoption. This article provides an overview of GaN technologies from EPC, Infineon Technologies, Navitas Semiconductor, Innoscience, and ROHM, along with key evaluation parameters and commercially available products.Purpose and scopeThe purpose of this article is to examine the GaN technology landscape by reviewing the solutions offered by five key manufacturers. Each manufacturer has developed GaN-based products with unique architectures, integration levels, and application focuses. This article details the fundamental characteristics of their GaN power devices and provides a comparative analysis of essential parameters to consider when evaluating these components. Additionally, a selection of commercially available devices from each manufacturer is highlighted.Efficient Power Conversion (EPC)Founded in 2007, EPC focuses on advancing power electronics by developing and commercializing GaN-based power devices. EPC is a pioneer in GaN technology, focusing on enhancement-mode GaN (eGaN) FETs and integrated circuits. Their GaN devices are widely used in applications requiring high-speed switching, including DC-DC converters, lidar systems, and Class-D audio amplifiers. 03.21.2025 03.19.2025 03.17.2025 EPC’s proprietary GaN-on-silicon technology delivers superior performance by reducing gate charge, output capacitance, and conduction losses. Their chip-scale packaging (CSP) approach minimizes parasitics, enhancing efficiency and thermal performance.A cross-section of EPC’s

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